Scientific Publications 2015

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations”  
conference: American Vacuum Society Symopsium - AVS 2015 (San Jose, US) 
authors: Sebastian Mohr1 , Anna Dzarasova1 , Dimitrios Tsamados2 , Vaibhav Deshpande 2 , Mohamed Oulmane 2 , Jonathan Tennyson 3
1 Quantemol Ltd., London, United Kingdom; 2 Synopsys LLC, Zurich, Switzerland; 3 University College London, London, United Kingdom  

 

Linking reactor-scale plasma modelling with feature-scale profile simulation
conference: Dry Process Symposium (Awaji, Japan) 
authors: ebastian Mohr1 , Anna Dzarasova1 , Dimitrios Tsamados2 , Vaibhav Deshpande 2 , Mohamed Oulmane 2 , Jonathan Tennyson 3
 1 Quantemol Ltd., London, United Kingdom; 2 Synopsys LLC, Zurich, Switzerland; 3 University College London, London, United Kingdom  

 

Technical Publications 2015

“European ‘PowerBase’ to explore the next-generation power devices”
journal: Bodo’s Power Systems, December 2015, pgs 56-57
authors: IMEC

 

Scientific Publications 2016

Journals:

Gate Stability of GaN-Based HEMTs with P-Type Gate”  
journal:  Electronics 2016, 5(2), 14; doi:10.3390/electronics5020014 
authors: Matteo Meneghini 1, Isabella Rossetto 1 , Vanessa Rizzato 1 , Steve Stoffels 2 , Marleen Van Hove 2 , Niels Posthuma 2 , Tian-Li Wu 2 , Denis Marcon 2 , Stefaan Decoutere 2 , Gaudenzio Meneghesso 1 and Enrico Zanoni 1
1 Department of Information Engineering, University of Padova, Padova, Italy
2 IMEC, Heverlee, Belgium; ;

 

"Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination,"
journal: IEEE Transactions on Electron Devices, vol. 63, no. 9
authors: J. Hu 1, S. Stoffels 1, S. Lenci 1, B. De Jaeger 1, N. Ronchi 1, A. N. Tallarico2, D. Wellekens 1, S. You, B. Bakeroot 1, G. Groeseneken 1 and S. Decoutere 1,
1 IMEC, Heverlee, Belgium
2 Department of Information Engineering, University of Padova, Padova, Italy

 

Conferences:

BESI          

S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink, “Exposed Die Wafer Level Encapsulation By Transfer Molding” in 6th Electronics System-Integration Technology Conference, September 13 – 16, 2016 , Grenoble, France

 

FHG

Stockmeier, L. Lehmann, C. Reimann, J. Friedrich.: Possible reasons for dislocation formation in heavily doped Czochralski silicon, 1st German Czechoslovak Conference on Crystal Growth
Dresden, Germany, March 16-18, 2016

 

Stockmeier, L. Lehmann, C. Reimann, J. Friedrich, “Possible reasons for dislocation formation in heavily doped Czochralski silicon”, in the International Conference on Crystal Growth and Epitaxy -ICCGE-18, August 7-12, 2016, Nagoya, Japan

 

Invited talk - J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann, “Possible reasons for dislocation formation in heavily doped Czochralski silicon”, 10th International Conference of Polish Society for Crystal Growth - ICPSCG10 , October 16-21, 2016 Zakopane, Poland

 

IMEC

Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere, “Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)” in 18th International Conference on Metal Organic Vapor Phase Epitaxy, July 10-15, 2016, San Diego, USA

 

IMEC and STUBA

Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli, “MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)” in 18th International Conference on Metal Organic Vapor Phase Epitaxy, July 10-15, 2016, San Diego, USA

 

UOB and IMEC

Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball, ”Processes behind Suppressed Current Collapse Buffer Architectures”, in The International Workshop on Nitride Semiconductors 2016, October 2-7, 2016 Florida, USA

 

STUBA

Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval, "Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations", in International MOS-AK Workshop, Shanghai, China, 26-28 Jun 2016, pp.15,http://mos-ak.org/shanghai_2016/index.php

 

STUBA and NANO

Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval, "UIS Capability of Modern GaN Power Devices", in ADEPT 2016 : 3rd international conference on advances in electronic and photonic technologies. Tatranska Lomnica, High Tatras, Slovakia. June 20-23, 2016

Juraj Marek, Ľubica Stuchlíková, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval, " Impact of repetitive UIS on modern GaN power devices", The11thInternationalConferenceonAdvanced Semiconductor Devices And Microsystems - ASDAM 2016, Smolenice, Slovakia

 

Quantemol

 

Jonathan Tennyson, Christian Hill, Sara Rahimi, ”QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, August 21-24,  2016,  Liverpool, United Kingdom

 

Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson, “ QDB: Validated Plasma Chemistries Database” in 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, October 10–14, 2016; Bochum, Germany

 

S.Rahimi, C.Hill, L.Tse, A.Vibhakar, S.Mohr, J.R.Hamilton, A. Dzarasova, D.B. Brown, J.Tennyson, “Constructing self-consistent validated plasma chemistry “,  in The 38th International Symposium on Dry Process (DPS2016), November 21-22, 2016.Sapporo, Japan

 

UNIGRAZ:

Hofer V., Leitner J., Nowak T., Determination of guard bands for quality characteristics using copula-based models for longitudinal data, The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, Göttingen, March 2016,

 

Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak, “Guardbanding Techniques for the Semiconductor Industry: A Comparative Study” in The Joint Statistical Meeting – JSM2016, Jualy 30, 2016,Chicago, USA

 

Scientific Publications 2017

Journals:

Chvála, J. Marek, P. Príbytný, A. Šatka, M. Donoval and D. Donoval, "Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties," in IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 333-336, Jan. 2017.

 

Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere, "200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration," inIEEE Electron Device Letters, vol.PP, no.99, pp.1-1
doi: 10.1109/LED.2017.2703304

 

Tennysonet al. "QDB: a new database of plasma chemistries and reactions." Plasma Sources Science and Technology 26.5 (2017): 055014.

 

Conferences:

 

Stoffels, B. Bakeroot, T.L. Wu, D. Marcon, N.E. Posthuma, S. Decoutere," Failure Mode for p-GaN gates under forward gatestress with varying Mg concentration".International Reliability Physics Symposium - IRPS2017, April 2-6, 2017, Monterey, California, USA

Matteo Meneghini,Isabella Rossetto, Matteo Borga, GaudenzioMeneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, NielsPosthuma, Stefaan Decoutere, "Degradation of GaN-HEMTs with p-GaN Gate:Dependence on Temperature and on Geometry", International Reliability Physics Symposium - IRPS2017, April 2-6, 2017, Monterey, California, USA

Dzarasova “QDB: A new database of plasma chemistries and reactions – concept and exemplar verification”, IOP Plasma physics conference, April03-06 2017, Oxford, UK

Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak," Guardbanding based on Device Drift Behavior", Nineteenth Annual Automotive Electronics Reliability Workshop, April 18 - 20, 2017, Sheraton Detroit Novi Hotel, USA

Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere, "200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration," 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere, “CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere “Next generation 200mm substrates for GaN power devices,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens, “Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann,” Strain analysis and dicing defects of GaN on Si substrates” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen, “Application Related Reliability Test Concept for GaN HEMT Power Devices” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann, “High temperature failure mode in power GaN devices,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Lymperakis and J. Neugebauer “Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval, “Modern p-GaN power devices under UIS conditions” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere, “Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni, “Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs”, 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni, “Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.

Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni, “A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions,” 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe: May 21-24, 2017, Gran Canaria, Spain.