CSIC-CNM main activities are basic and applied R&D, education and training in micro and nanotechnologies, components and systems. Our mission is to improve the knowledge and to contribute to the implementation of solutions based in these technologies in new products, for solving societal challenges.

The Barcelona Microelectronics Institute (IMB) is the Barcelona location of the National Microelectronics Centre (CNM), and belongs to the Spanish National Research Council (CSIC) since its foundation in 1985. Located in Bellaterra, in the Campus of the Autonomous University of Barcelona (UAB), which is a privileged environment for both basic and applied/industrial research. Beyond years, the research activity in technologies, devices and ICs based in traditional horizontal micro- and nano-electronic technologies (Key Enabling Technologies - KETs), has evolved to the fields of Sensors, Microsystems, Micro-electromechanic Systems (MEMS), Power Devices and Systems, and Smart Systems, offering a better functionality (More than Moore). The R&D activities of CSIC-CNM are complemented with training of researchers and with support and technology transfer to companies of the main industrial fields in its environment.

Role:

CSIC-CNM will participate in WP7 (Compact Power Applications) in close collaboration with IKERLAN (“Industry/Solar Converters”) to cover the following topics: 1- To fully characterize the electro-thermal behaviour of GaN devices. 2- To develop accurate electro-thermal models of the GaN devices allowing optimum converter design, in particular, solar inverters in WP7. 3- To collaborate with IKERLAN in the optimum thermal management design and characterization of the solar inverter. 4- To evaluate the limits and possibilities of high temperature operation of the GaN devices in the framework of solar inverter applications.

Key Contribution:

CSIC-CNM will develop suitable electro-thermal models for the GaN devices used by IKERLAN in the development of power converters for PV applications (WP7). Such models will provide more accurate simulations for optimum design of the converter. The approach will include detailed electro-thermal characterization as a basis for developing compact thermal models compatible with electrical simulators but, if required, CSIC-CNM can also go more in depth in the analysis of the phenomena determining the thermal behaviour of the GaN devices. The thermal interaction between device and package will be also studied and modelled with the help of FE thermal simulators.

Contact

	Consejo Superior de Investigaciones Científicas - Centro Nacional de Microelectrónica (CSIC-CNM)
Carrer  Til·lers s/n – CAMPUS UAB
08193 Cerdanyola del Vallès (Bellaterra) Barcelona, Spain
www.imb-cnm.csic.es